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參數(shù)資料
| 型號(hào)： | MRF6408 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | XC17S10VOG8C |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 230K |
| 代理商： | MRF6408 |
MRF6408
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
hFE
20
35
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance (2)
(VCB = 26 Vdc, IE = 0, f = 1 MHz)
Cob
—
18
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.88 GHz)
Gpe
7.8
8.8
—
dB
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz)
Gpe
7.5
8.3
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.88 GHz)
η
37
42
—
%
Collector Efficiency
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz)
η
34
39
—
%
Output Power at 1 dB Compression Point
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.88 GHz)
P @ 1 dB
15
—
—
W
Output Power at 1 dB Compression Point
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.99 GHz)
P @ 1 dB
14
—
—
W
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 12 W (PEP), ICQ = 100 mA,
f1 = 1880 MHz, f2 = 1880.1 MHz)
IMD
—
–35
–30
dBc
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 12 W (PEP), ICQ = 100 mA,
f1 = 1990 MHz, f2 = 1990.1 MHz)
IMD
—
–35
–30
dBc
Load Mismatch
(VCC = 26 Vdc, Pout = 12 W (CW), ICQ = 100 mA, f = 1.99 GHz,
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
ψ
No Degradation in Output Power
(2) For information only. This part is collector matched.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6409 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF641 | 制造商:Motorola 功能描述:641, TRANSISTOR |
| MRF6414 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER TRANSISTOR NPN SILICON |
| MRF6414PHT | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon RF Power Transistor |
| MRF644 | 制造商:MOTOROLA 功能描述:5961010973421 |
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