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參數(shù)資料
| 型號(hào)： | MRF6404 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(NPN硅射頻功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CASE 395C-01, 3 PIN |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 274K |
| 代理商： | MRF6404 |
MRF6404
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
For information only. This part is collector matched.
Cob
30
38
—
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 30 W, ICQ = 150 mA, f = 1.88 GHz)
Common–Emitter Amplifier Power Gain
(VCC = 26 V, Pout = 28 W, ICQ = 150 mA)
(f = 1.99 GHz)
Gpe
7.5
8.5
—
dB
Gpe
7
8
—
dB
Collector Efficiency
(VCC = 26 V, Pout = 30 W, f = 1.88 GHz)
(VCC = 26 V, Pout = 28 W, f = 1.99 GHz)
Output Power at 1 dBc
(VCC = 26 V, f = 1.88 GHz)
(VCC = 26 V, f = 1.99 GHz)
Output Mismatch Stress: VSWR = 3:1 (all phase angles)
(VCC = 26 Vdc, Pout = 25 W, ICQ = 150 mA, f = 1.88 GHz)
η
38
35
43
40
—
—
%
P1dBc
30
28
35
33
—
—
Watts
Ψ
No Degradation in Output Power
f
(GHz)
Zin
(
)
ZOL*
(
)
1.8
1.85
1.9
4.3 + j6.1
4.8 + j5.0
4.6 + j5.3
2.7 – j1.0
2.9 + j0.3
3.0 + j1.2
ZOL*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain
@ VCC = 26 V, ICQ = 150 mA, Pout = 30 W
f = 1.8 GHz
1.9 GHz
ZOL*
Zin
f = 1.8 GHz
Zo = 20
1.9 GHz
DCS EVALUATION
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