參數(shù)資料
型號(hào)： MRF5S9101MR1
廠商： MOTOROLA INC
元件分類(lèi)： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝： PLASTIC, CASE 1486-03, 4 PIN
文件頁(yè)數(shù)： 9/16頁(yè)
文件大?。?/td> 451K
代理商： MRF5S9101MR1
MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
MOTOROLA RF DEVICE DATA
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Rating
Per JESD 22-A113
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
1
Adc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 400 Adc)
VGS(th)
2
2.8
3.5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.21
0.3
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
7
—
S
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
70
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.2
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, Pout = 100 W, IDQ = 700 mA, f = 960 MHz
Power Gain
Gps
16
17.5
19
dB
Drain Efficiency
ηD
56
60
—
%
Input Return Loss
IRL
—
-15
-9
dB
Pout @ 1 dB Compression Point, CW
P1dB
100
110
—
W
(1) Part is internally input matched.
(continued)
相關(guān)PDF資料
PDF描述
MRF5S9101NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S9101MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9101N 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270
MRF5S9101NBR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9101NR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9150HR3 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9150HR3_09 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
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