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參數(shù)資料
| 型號(hào)： | MRF5S9101MR1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| 封裝： | PLASTIC, CASE 1486-03, 4 PIN |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 451K |
| 代理商： | MRF5S9101MR1 |
MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS - 800 MHz
940
10
20
820
20
65
19
60
18
55
17
50
16
45
15
10
14
12
13
14
12
16
11
18
830 840 850 860 870 880 890 900 910 920 930
f, FREQUENCY (MHz)
Figure 16. Power Gain, Input Return Loss and
Drain Efficiency versus Frequency at 100 W CW
G
ps
,POWER
GAIN
(dB)
IRL
Gps
VDD = 26 Vdc
IDQ = 700 mA
940
10
20
820
20
45
IRL
Gps
f, FREQUENCY (MHz)
Figure 17. Power Gain, Input Return Loss and
Drain Efficiency versus Frequency at 40 W CW
G
ps
,POWER
GAIN
(dB)
VDD = 26 Vdc
IDQ = 700 mA
19
40
18
35
17
30
16
25
15
10
14
12
13
14
12
16
11
18
830 840 850 860 870 880 890 900 910 920 930
910
0
3.5
850
Pout = 50 W Avg.
f, FREQUENCY (MHz)
Figure 18. Error Vector Magnitude versus
Frequency
VDD = 28 Vdc
IDQ = 650 mA
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
3
2.5
2
1.5
1
0.5
860
870
880
890
900
40 W Avg.
25 W Avg.
100
0
9
1
0
60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. Error Vector Magnitude and Drain
Efficiency versus Output Power
η
VDD = 28 Vdc
IDQ = 650 mA
f = 880 MHz
EVM
,DRAIN
EFFICIENCY
(%)
η
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
850
640
530
320
210
10
TC = 25_C
INPUT
RETURN
LOSS
(dB)
IRL,
η
D
,DRAIN
EFFICIENCY
(%)
ηD
INPUT
RETURN
LOSS
(dB)
IRL,
η
D
,DRAIN
EFFICIENCY
(%)
ηD
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5S9101NR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA |
| MRF5S9101NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9101MR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270 |
| MRF5S9101MBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
| MRF5S9101NBR1 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S9101N | 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270 |
| MRF5S9101NBR1 | 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9101NR1 | 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HR3 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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