參數(shù)資料
型號: MRF5S9101MR1
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
封裝: PLASTIC, CASE 1486-03, 4 PIN
文件頁數(shù): 4/16頁
文件大?。?/td> 451K
代理商: MRF5S9101MR1
MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS - 800 MHz
910
82
64
850
SR 400 kHz
Pout = 50 W Avg.
f, FREQUENCY (MHz)
Figure 20. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL
REGROWTH
@
400
kHz
AND
600
kHz
(dBc)
SR 600 kHz
40 W Avg.
25 W Avg.
Pout = 50 W Avg.
40 W Avg.
25 W Avg.
66
68
70
72
74
76
78
80
860
870
880
900
890
VDD = 28 Vdc
IDQ = 650 mA
90
80
45
0
TC = 25_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 21. Spectral Regrowth at 400 kHz
versus Output Power
VDD = 28 Vdc
IDQ = 650 mA
f = 880 MHz
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
10
20
30
40
50
60
70
80
50
55
60
65
70
75
90
85
65
0
TC = 25_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 22. Spectral Regrowth at 600 kHz
versus Output Power
VDD = 28 Vdc
IDQ = 650 mA
f = 880 MHz
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
70
75
80
10
20
30
40
50
60
70
80
相關(guān)PDF資料
PDF描述
MRF5S9101NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF5S9101MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF5S9101NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9101N 制造商:-- 功能描述:MOSFET Transistor, N-Channel, TO-270
MRF5S9101NBR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9101NR1 功能描述:射頻MOSFET電源晶體管 100W 900MHZ26V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9150HR3 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9150HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor