- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359217 > MRF5P20180R6 (MOTOROLA INC) RF POWER FIELD EFFECT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MRF5P20180R6 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER FIELD EFFECT TRANSISTOR |
| 中文描述： | 2 CHANNEL, L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 375D-04, NI-1230, 4 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 365K |
| 代理商： | MRF5P20180R6 |
6
RF Device Data
Freescale Semiconductor
MRF5P20180HR6
TYPICAL CHARACTERISTICS
100
0
35
1
55
20
30
25
25
30
20
35
15
40
10
45
5
50
10
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS, Avg.) WCDMA
Figure 8. 2-Carrier W-CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
I
V
DD
= 28 Vdc, I
DQ
= 1600 mA
f1 = 1955 MHz, f2 = 1965 MHz
2 x WCDMA
10 MHz @ 3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
η
D
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than
±
10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D2
for MTTF in a particular application.
220
100
120
140
160
180
200
10
7
10
10
10
9
10
8
10
0.0001
100
0
PEAKTOAVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
P
10
1
0.1
0.01
0.001
2
4
6
8
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
110
120
70
20
80
60
50
(
90
100
40
30
3.84 MHz
Channel BW
IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
20
5
15
10
0
5
10
15
20
25
25
W-CDMA TEST SIGNAL
M
2
)
η
D
,
p
,
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF5P20180 | RF POWER FIELD EFFECT TRANSISTOR |
| MRF5P21045NR1 | RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRF5S19060MBR1 | RF Power Field Effect Transistors |
| MRF5S19090HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF5S19130HR3 | Suitable for TDMA, CDMA and multicarrier amplifier applications. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5P21045NR1 | 功能描述:射頻MOSFET電源晶體管 HV5 2170MHZ 10W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5P21180HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180HR6 | 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5P21180HR6_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。