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參數(shù)資料
| 型號： | MRF21120R6 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 364K |
| 代理商： | MRF21120R6 |
6
RF Device Data
Freescale Semiconductor
MRF21120R6
TYPICAL CHARACTERISTICS
Figure 3. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
9
0.10
10
Figure 4. Intermodulation Distortion
versus Output Power
MARKER 1 [T1]
22.77 dBm
2.17000000 GHz
P
out
, OUTPUT POWER (WATTS) PEP
1.0
0.10
13
Figure 5. Class AB Broadband
Circuit Performance
13
f, FREQUENCY (MHz)
5
2100
Figure 6. 2.17 GHz W-CDMA Mask at
14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch
Center 2.17 GHz
Figure 7. Power Gain, Efficiency, ACPR
versus Output Power (W-CDMA)
P
out
, OUTPUT POWER (WATTS) AVG.
10
12
14
14
7
11
2140
11
2200
1.0
8
10
2
100
12
I
60
20
50
30
40
32
40
26
30
50
45
35
12
9
2180
2120
2160
G
ps
η
100
60
30
80
40
20
10
10
Figure 8. Power Gain, Efficiency, IMD
versus Output Power
P
out
, OUTPUT POWER (WATTS) PEP
10
12
13
7
100
1.0
9
11
5
0.10
,
Gp
1800 mA
1500 mA
1300 mA
1100 mA
1000 mA
850 mA
600 mA
V
DD
= 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
1.0
10
100
1800 mA
600 mA
850 mA
1100 mA
1000 mA
1300 mA
1500 mA
V
DD
= 28 Vdc
f1 = 2170.0 MHz
f2 = 2170.1 MHz
28
24
I
D
η
,
10
6
8
VSWR
IMD
V
DD
= 28 Vdc, I
DQ
= 1000 mA
TwoTone, 100 kHz Tone Spacing
V
2.0
1.0
1.5
1.5 MHz
Span 15 MHz
70
90
50
c11
c11
c0
c0
cu1
cu1
1RM
Ref Lv1
5 dBm
RBW
VBW
SWT
30 kHZ
1 MHz
2 s
RF Att
Unit
10 dB
dBm
4
6
η
,
20
40
60
40
0
60
20
G
ps
η
ACPR UP
ACPR DOWN
V
DD
= 28 Vdc
I
DQ
= 1000 mA
f = 2170 MHz
η
,
I
6
8
10
20
60
80
40
0
80
40
20
60
G
ps
η
IMD
V
DD
= 28 Vdc, I
DQ
= 1000 mA
f = 2170.0 MHz, f2 = 2170.1 MHz
1
CH PWR
ACR UP
ACR LOW
1 [T1]
A
22.77 dBm
2.17000000 GHz
2.95 dBm
45.14 dB
45.45 dB
,
Gp
,
Gp
,
Gp
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MRF21180 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistor |
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