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參數(shù)資料
| 型號： | MRF21120R6 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor |
| 中文描述： | RF功率場效應晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 364K |
| 代理商： | MRF21120R6 |
MRF21120R6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN-PCS/cellular radio and WLL
applications.
W-CDMA Performance @ -45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW
Output Power
Features
Internally Matched for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +65
Vdc
Gate-Source Voltage
V
GS
-0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
389
2.22
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Case Operating Temperature
T
C
150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.45
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Document Number: MRF21120
Rev. 11, 5/2006
Freescale Semiconductor
Technical Data
MRF21120R6
2110-2170 MHz, 120 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFET
CASE 375D-05, STYLE 1
NI-1230
Freescale Semiconductor, Inc., 2006. All rights reserved.
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