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參數(shù)資料
| 型號： | MRF377HR5 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 780K |
| 代理商： | MRF377HR5 |
MRF377HR3 MRF377HR5
1
RF Device Data
Freescale Semiconductor
RF Power Field-Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
Typical Broadband DVBT OFDM Performance @ 470-860 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power — 45 Watts Avg.
Power Gain
≥
16.7 dB
Efficiency
≥
21%
ACPR
≤
-58 dBc
Typical Broadband ATSC 8VSB Performance @ 470-860 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power — 80 Watts Avg.
Power Gain
≥
16.5 dB
Efficiency
≥
27.5%
IMD
≤
-31.3 dBc
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Input and Output Matched for Ease of Use
Integrated ESD Protection
Excellent Thermal Stability
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40
μ
″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
(1)
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
- 0.5, +65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Drain Current - Continuous
I
D
17
Adc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
648
3.7
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81
°
C, 105 W CW
Case Temperature 77
°
C, 45 W CW
R
θ
JC
0.27
0.29
°
C/W
1. Each side of device measured separately.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF377H
Rev. 0, 1/2005
Freescale Semiconductor
Technical Data
470 - 860 MHz, 240 W, 32 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 375G-04, STYLE 1
NI-860C3
MRF377HR3
MRF377HR5
Freescale Semiconductor, Inc., 2005. All rights reserved.
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