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參數(shù)資料
| 型號： | MR2A16A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大?。?/td> | 161K |
| 代理商： | MR2A16A |
MR2A16A/D, Rev. 0.1
8
Freescale Semiconductor
Timing Specifications
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled; See Notes 1, 2, 3, and 4)
Parameter
Symbol
Timing Set
25
Min
25
0
Unit
Notes
20
35
Min
20
0
Max
—
—
Max
—
—
Min
35
0
Max
—
—
Write cycle time
Address set-up time
Address valid to end of write
(G high)
Address valid to end of write
(G low)
t
AVAV
t
AVWL
ns
ns
8
t
AVWH
12
—
15
—
18
—
ns
t
AVWH
15
—
17
—
20
—
ns
Write pulse width (G high)
t
WLWH
t
WLEH
t
WLWH
t
WLEH
t
DVWH
t
WHDX
t
WLQZ
t
WHQX
t
WHAX
8
—
10
—
15
—
ns
Write pulse width (G low)
8
—
10
—
15
—
ns
Data valid to end of write
Data hold time
Write low to data Hi-Z
Write high to output active
Write recovery time
5
0
0
3
8
—
—
7
—
—
6
0
0
3
10
—
—
9
—
—
10
0
0
3
12
—
—
12
—
—
ns
ns
ns
ns
ns
5, 6, 7
5, 6, 7
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and bus contention
conditions must be minimized or eliminated during read and write cycles.
3. If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4. After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns.
5. This parameter is sampled and not 100% tested.
6. Transition is measured
±
200 mV from steady-state voltage.
7. At any given voltage or temperature, t
WLQZ
max < t
WHQX
min.
8. All write cycle timings are referenced from the last valid address to the first transition address.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR2A16A_1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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