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參數(shù)資料
| 型號： | MR2A16A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 161K |
| 代理商： | MR2A16A |
MR2A16A/D, Rev. 0.1
4
Freescale Semiconductor
Electrical Specifications
Direct Current (dc)
Table 4. Operating Conditions
Parameter
Symbol
V
DD
V
WI
V
IH
V
IL
T
A
Min
3.0
(1)
2.5
2.2
–0.5
(3)
0
Typ
3.3
2.7
—
—
Max
3.6
3.0
(1)
Unit
V
V
V
V
°C
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Operating temperature
NOTES:
1. After power up or if V
DD
falls below V
WI
, a waiting period of 1
μ
s must be observed.
Memory is designed to prevent writing for all input pin conditions if V
DD
falls below minimum V
WI
.
2. V
IH
(max) = V
DD
+ 0.3 Vdc; V
IH
(max) = V
DD
+ 2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
3. V
IL
(min) = –0.5 Vdc; V
IL
(min) = –2.0 Vac (pulse width
≤
10 ns) for I
≤
20.0 mA.
V
DD
+ 0.3
(2)
0.8
70
Table 5. dc Characteristics
Parameter
Symbol
I
lkg(I)
I
lkg(O)
Min
—
—
Typ
—
—
Max
±
1
±
1
Unit
μ
A
μ
A
Input leakage current
Output leakage current
Output low voltage
(I
OL
= +4 mA)
(I
OL
= +100
μ
A)
Output high voltage
(I
OH
= –4 mA)
(I
OH
= –100 mA)
V
OL
—
—
0.4
V
SS
+ 0.2
V
V
OH
2.4
V
DD
– 0.2
—
—
V
Table 6. Power Supply Characteristics
Parameter
Timing Set
20
25
35
20
25
35
20
25
35
Symbol
I
DDR
I
DDR
I
DDR
I
DDW
I
DDW
I
DDW
I
SB1
I
SB1
I
SB1
Typ
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
ac active supply current — Read Modes
(I
Out
= 0 mA, V
DD
= max)
ac active supply current — Write Modes
(V
DD
= max)
ac standby current
(V
DD
= max, E = V
IH
)
(no other restrictions on other inputs)
CMOS standby current
(E
≥
V
DD
– 0.2 V and
V
In
≤
V
SS
+ 0.2 V or
≥
V
DD
– 0.2 V)
(V
DD
= max, f = 0 MHz)
I
SB2
TBD
TBD
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR2A16A_1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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