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| 型號(hào)： | MR2A16A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存 |
| 文件頁(yè)數(shù)： | 12/16頁(yè) |
| 文件大小： | 161K |
| 代理商： | MR2A16A |
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MR2A16A/D, Rev. 0.1
12
Freescale Semiconductor
Timing Specifications
Table 12. Write Cycle Timing 3 (LB/UB Controlled; See Notes 1, 2, 3, 4, and 5)
Parameter
Symbol
Timing Set
25
Min
25
0
Unit
Notes
20
35
Min
20
0
Max
—
—
Max
—
—
Min
35
0
Max
—
—
Write cycle time
Address set-up time
Address valid to
end of write (G high)
Address valid to end of
write (G low)
t
AVAV
t
AVBL
ns
ns
6
t
AVBH
12
—
15
—
18
—
ns
t
AVBH
15
—
17
—
20
—
ns
Byte pulse width (G high)
t
BLEH
t
BLWH
t
BLEH
t
BLWH
t
DVBH
t
BHDX
t
BHAX
8
—
10
—
15
—
ns
Byte pulse width (G low)
8
—
10
—
15
—
ns
Data valid to end of write
Data hold time
Write recovery time
5
0
8
—
—
—
6
0
—
—
—
10
0
12
—
—
—
ns
ns
ns
10
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and bus contention
conditions must be minimized or eliminated during read and write cycles.
3. If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4. After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns.
5. If both byte control signals are asserted, the two signals must have no more than 2 ns skew between them.
6. All write cycle timings are referenced from the last valid address to the first transition address.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR2A16A_1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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