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| 型號(hào)： | MR2A16A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機(jī)存取內(nèi)存 |
| 文件頁(yè)數(shù)： | 10/16頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | MR2A16A |
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MR2A16A/D, Rev. 0.1
10
Freescale Semiconductor
Timing Specifications
Table 11. Write Cycle Timing 2 (E Controlled; See Notes 1,2,3, and 4)
Parameter
Symbol
Timing Set
25
Min
25
0
Unit
Notes
20
35
Min
20
0
Max
—
—
Max
—
—
Min
35
0
Max
—
—
Write cycle time
Address set-up time
Address valid to end of write
(G high)
Address valid to end of write
(G low)
Enable to end of write
(G high)
Enable to end of write
(G low)
Data valid to end of write
Data hold time
Write recovery time
t
AVAV
t
AVEL
ns
ns
7
t
AVEH
12
—
15
—
18
—
ns
t
AVEH
15
—
17
—
20
—
ns
t
ELEH
t
ELWH
t
ELEH
t
ELWH
t
DVEH
t
EHDX
t
EHAX
8
—
10
—
15
—
ns
8
—
10
—
15
—
ns
5, 6
5
0
8
—
—
—
6
0
10
—
—
—
10
0
12
—
—
—
ns
ns
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and bus contention
conditions must be minimized or eliminated during read and write cycles.
3. If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
4. After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum of 2 ns.
5. If E goes low at the same time or after W goes low, the output will remain in a high-impedance state.
6. If E goes high at the same time or before W goes high, the output will remain in a high-impedance state.
7. All write cycle timings are referenced from the last valid address to the first transition address.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR2A16A_1 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACMA35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACMA35R | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR2A16ACTS35C | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| MR2A16ACYS35 | 功能描述:NVRAM 4Mb 3.3V 35ns 256Kx16 Prallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲(chǔ)容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問(wèn)時(shí)間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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