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參數(shù)資料
| 型號(hào)： | MR18R326GAG0-CT9 |
| 廠(chǎng)商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
| 中文描述： | （32Mx18）16個(gè)RIMM的模塊基于576Mb阿芯片，32秒銀行，32K/32ms參考，為2.5V |
| 文件頁(yè)數(shù)： | 8/14頁(yè) |
| 文件大?。?/td> | 259K |
| 代理商： | MR18R326GAG0-CT9 |
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Page 7
Version 1.0 Mar. 2004
MR18R326GAG0
RIMM Module Current Profile
Table 7: RIMM Module Current Profile
I
DD
RIMM Module Capacity
1152MB
Unit
Number of 576Mb RDRAM devices
16
RIMM Module power conditions
a
Freq
Max
I
DD1
One RDRAM in Read
b
, balance in
NAP mode
-1066
960
c
mA
-800
780
I
DD2
One RDRAM in Read
b
, balance in
Standby mode
-1066
2550
mA
-800
2145
I
DD3
One RDRAM in Read
b
, balance in
Active mode
-1066
3300
mA
-800
2745
I
DD4
One RDRAM in Write, balance in
NAP mode
-1066
990
mA
-800
790
I
DD5
One RDRAM in Write, balance in
Standby mode
-1066
2580
mA
-800
2155
I
DD6
One RDRAM in Write, balance in
Active mode
-1066
3330
mA
-800
2755
a. Actual power will depend on memory controller and usage patterns. Power does not include Refresh
Current.
b. I/O current is a function of the % of 1
’
s, to add I/O power for 50% 1
’
s for a X16 need to add 257mA or 290mA for X18 ECC module for the following:
V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
- 0.5V.
c. Current values represent X18(Ecc)
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