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參數(shù)資料
| 型號： | MR18R326GAG0-CT9 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | (32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
| 中文描述： | （32Mx18）16個RIMM的模塊基于576Mb阿芯片，32秒銀行，32K/32ms參考，為2.5V |
| 文件頁數(shù)： | 6/14頁 |
| 文件大?。?/td> | 259K |
| 代理商： | MR18R326GAG0-CT9 |
Page 5
Version 1.0 Mar. 2004
MR18R326GAG0
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(576Mb)
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
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R
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R
R
R
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L
L
L
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L
L
L
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L
L
L
L
L
L
U1
S
L
L
V
R
S
R
R
Vdd
Gnd
2 per
RDRAM device
0.22
μ
F
SCL
WP
SDA
A0 A1
SCL
SWP
SA0
SA1
SA2
SDA
Serial Presence Detect
Note 1. Rambus
Channel signals form a loop through
the RIMM module, with the exception of the SIO chain.
Note 2. See Serial Presence Detection Specification for
information on the SPD device and its contents.
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D
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D
C
C
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C
R
R
R
C
C
C
U2
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(576Mb)
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D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
U3
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(576Mb)
D
D
D
D
D
D
D
D
D
C
C
C
C
R
R
R
C
C
C
UN
C
C
D
D
D
D
D
D
D
D
D
SIO0
SIO1
SCK
CMD
Vref
RDRAM Device(576Mb)
V
REF
Gnd
1 per
2 RDRAM devices
Plus one
Near Connector
V
CMOS
Gnd
1 per
2 RDRAM devices
0.22
μ
F
A2
U0
Vcc
SV
DD
0.22
μ
F
SV
DD
Gnd
47K
Module
Capacity
N
1152MB
16
0.22
μ
F
Figure 2: RIMM Module Functional Diagram
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