參數(shù)資料
型號： MPQ3725
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116
封裝： PLASTIC, DIP-14
文件頁數(shù)： 9/35頁
文件大?。?/td> 353K
代理商： MPQ3725
Package Outline Dimensions
8–2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Package Outline Dimensions
Dimensions are in inches unless otherwise noted.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
XX
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
–––
12.70
–––
L
0.250
–––
6.35
–––
N
0.080
0.105
2.04
2.66
P
–––
0.100
–––
2.54
R
0.115
–––
2.93
–––
V
0.135
–––
3.43
–––
1
CASE 029–04
(TO–226AA) TO–92
PLASTIC
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
L
F
B
K
G
H
C
V
N
XX
SEATING
PLANE
1
J
SECTION X–X
D
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.022
0.46
0.56
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
–––
12.70
–––
L
0.250
–––
6.35
–––
N
0.080
0.105
2.04
2.66
P
–––
0.100
–––
2.54
R
0.135
–––
3.43
–––
V
0.135
–––
3.43
–––
23
CASE 029–05
(TO–226AE) TO–92
1–WATT PLASTIC
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
相關PDF資料
PDF描述
MPQ3762 1.5 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
MPQ3798 50 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116
MPQ3906 200 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116
MPQ6001 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116
MPQ6002 0.5 A, 30 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, TO-116
相關代理商/技術參數(shù)
參數(shù)描述
MPQ3725A 功能描述:兩極晶體管 - BJT NPN Quad Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPQ3762 制造商:Motorola Inc 功能描述:
MPQ3798 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:PNP SILICON QUAD TRANSISTOR
MPQ3799 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:PNP SILICON QUAD TRANSISTOR
MPQ3904 制造商:Central Semiconductor Corp 功能描述:MPQ Series 40 V 200 mA NPN Through Hole Silicon Quad Transistor - TO-116 制造商:CENTRAL SEMICONDUCTOR 功能描述:MPQ Series 40 V 200 mA NPN Through Hole Silicon Quad Transistor - TO-116
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