參數(shù)資料
型號(hào): MPQ3725
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 1 A, 40 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR, TO-116
封裝: PLASTIC, DIP-14
文件頁(yè)數(shù): 12/35頁(yè)
文件大?。?/td> 353K
代理商: MPQ3725
MPQ3725
2–483
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
35
25
75
45
200
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
0.32
0.45
Vdc
Base – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.8
0.9
1.1
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT
250
275
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
5.1
10
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
62
80
pF
SWITCHING CHARACTERISTICS
Turn–On Time
(IC = 500 mAdc, IB1 = 50 mAdc
VBE(off) = –3.8 Vdc)
ton
20
35
ns
Turn–Off Time
(IC = 500 mAdc, IB1 = IB2 = 50 mAdc)
toff
50
60
ns
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Figure 1. Switching Times Test Circuit
TO
SAMPLING
OSCILLOSCOPE
Zin ≥ 100 kW
tr < 1.0 ns
–3.8 V
+30 V
15
100
1.0 k
1.0
mF
PULSE GENERATOR
tr, tf ≤ 1.0 ns
PW
≈ 1.0 ms
Zin = 50 W
DUTY CYCLE
≤ 2.0%
0
+9.7 V
1.0
mF
43
62
相關(guān)PDF資料
PDF描述
MPQ3762 1.5 A, 40 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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