參數(shù)資料
型號(hào): MPC2104P
廠商: Motorola, Inc.
英文描述: 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
中文描述: 256KB/512KB BurstRAM二級(jí)緩存模塊為PowerPC制備/ CH旺平臺(tái)
文件頁數(shù): 6/16頁
文件大?。?/td> 158K
代理商: MPC2104P
MPC2104P
MPC2105P
6
MOTOROLA FAST SRAM
TRUTH TABLE
(See Notes 1 through 4)
Next Cycle
Address
Used
Standby
ADS0
CNTEN0
CG0 2
DHx/DLx
CWEx 2
Deselect
None
1
0
X
X
High–Z
X
14
Begin Read
External
0
0
X
X
High–Z
Continue Read
Next
X
1
0
1
High–Z
1
Continue Read
Next
X
1
0
0
DQ
1
Suspend Read
Current
X
1
1
1
High–Z
1
Suspend Read
Current
X
1
1
0
DQ
1
Begin Write
External
0
0
X
X
High–Z
0
Continue Write
Next
X
1
0
X
High–Z
0
Suspend Write
Current
X
1
1
X
High–Z
0
NOTES:
1. X = Don’t Care. 1 = logic high. 0 = logic low.
2. CG0 is an asynchronous signal and is not sampled by the clock CLK0. CG0 drives the bus immediately (tGLQX) following CG0 going low.
3. On write cycles that follow read cycles, CG0 must be negated prior to the start of the write cycle to ensure proper write data setup times.
CG0 must also remain negated at the completion of the write cycle to ensure proper write data hold times.
4. This READ assumes the RAM was previously deselected.
ASYNCHRONOUS TRUTH TABLE
Operation
CG0
I/O Status
Read
L
Data Out (DHx/DLx)
Read
H
High–Z
Write
X
High–Z
Deselected
X
High–Z
Sleep
X
High–Z
LINEAR BURST ADDRESS TABLE
(Burst Mode = VSS)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
INTERLEAVED BURST ADDRESS TABLE
(Burst Mode = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
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