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參數(shù)資料
| 型號： | MP4513 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅npn型三重?cái)U(kuò)散型（達(dá)林頓功率晶體管在1 4） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MP4513 |
MP4513
2002-11-20
5
Collector-emitter voltage V
CE
(V)
Safe Operating Area
C
C
r
th
– t
w
Pulse width t
w
(s)
T
r
t
Ambient temperature Ta (°C)
P
T
– Ta
T
T
Total power dissipation P
T
(W)
T
j
– P
T
J
T
j
0.1
1
0.05
0.03
0.3
0.5
1
3
5
10
3
10
30
100
300
20
IC max (pulsed)*
10 ms*
VCEO max
1 ms*
100 μs*
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0
8
40
2
4
6
80
120
160
200
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
Attached on a circuit board
(4)
(3)
(2)
(1)
Circuit board
0.001
0.01
0.1
1
10
100
1000
0.3
(3)
(2)
(1)
1
3
10
30
100
300
(4)
-No heat sink and attached on a circuit board-
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
50
5
Curves should be applied in thermal
limited area.
(single nonrepetitive pulse)
Below figure show thermal resistance per
1 unit versus pulse width.
Circuit board
2
4
6
8
0
160
40
80
120
10
0
(1) 1 device operation
(2) 2 devices operation
(3) 3 devices operation
(4) 4 devices operation
(1)
(2) (3) (4)
Circuit board
Attached on a circuit board
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