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參數(shù)資料
| 型號(hào)： | MP4513 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅npn型三重?cái)U(kuò)散型（達(dá)林頓功率晶體管在1 4） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | MP4513 |
MP4513
2002-11-20
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance of junction to
ambient
(4 devices operation, Ta = 25°C)
Σ
R
th (j-a)
25
°C/W
Thermal resistance of junction to case
(4 devices operation, Tc = 25°C)
Σ
R
th (j-c)
5.0
°C/W
Maximum lead temperature for
soldering purposes
(3.2 mm from case for 10 s)
T
L
260
°C
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 100 V, I
E
= 0 A
―
―
10
μA
Collector cut-off current
I
CEO
V
CE
= 100 V, I
B
= 0 A
―
―
10
μA
Emitter cut-off current
I
EBO
V
EB
= 5 V, I
C
= 0 A
0.3
―
2.0
mA
Collector-base breakdown voltage
V
(BR) CBO
I
C
= 1 mA, I
E
= 0 A
100
―
―
V
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
= 30 mA, I
B
= 0 A
100
―
―
V
h
FE (1)
V
CE
= 3 V, I
C
= 0.5 A
1000
―
―
DC current gain
h
FE (2)
V
CE
= 3 V, I
C
= 3 A
1000
―
―
―
Collector-emitter
V
CE (sat)
I
C
= 3 A, I
B
= 12 mA
―
―
2.0
Saturation voltage
Base-emitter
V
BE (sat)
I
C
= 3 A, I
B
= 12 mA
―
―
2.5
V
Transition frequency
f
T
V
CE
= 3 V, I
C
= 0.5 A
―
10
―
MHz
Collector output capacitance
C
ob
V
CB
E
= 0 A, f = 1 MHz
―
40
―
pF
Turn-on time
t
on
―
0.5
―
Storage time
t
stg
―
4.0
―
Switching time
Fall time
t
f
I
B1
=
I
B2
= 12 mA, duty cycle
≤
1%
―
2.5
―
μs
Emitter-Collector Diode Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
I
FM
―
―
―
5
A
Surge current
I
FSM
t = 1 s, 1 shot
―
―
8
A
Forward voltage
V
F
I
F
= 1 A, I
B
= 0 A
―
1.1
1.8
V
Reverse recovery time
t
rr
―
3.0
―
μs
Reverse recovery charge
Q
rr
I
F
= 5 A, V
BE
=
3 V, dI
F
/dt =
50 A/μs
―
40
―
μC
I
B
20 μs
V
CC
= 30 V
Output
1
I
B2
I
B1
Input
I
B
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