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參數(shù)資料
| 型號(hào)： | MP4513 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) |
| 中文描述： | 東芝功率晶體管模塊硅npn型三重?cái)U(kuò)散型（達(dá)林頓功率晶體管在1 4） |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | MP4513 |
MP4513
2002-11-20
4
Collector current I
C
(A)
h
FE
– I
C
D
F
Base current I
B
(mA)
V
CE
– I
B
C
C
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
I
C
– V
BE
C
C
Collector current I
C
(A)
V
CE (sat)
– I
C
C
V
C
8
Collector current I
C
(A)
V
BE (sat)
– I
C
B
V
B
Common emitter
VCE = 3 V
0
0
0.8
1.6
2.4
3.2
4.0
2
6
4
25
55
Tc = 100°C
Common emitter
Tc = 25°C
0
0.03
0.1
0.3
1
3
10
30
100
0.4
0.8
1.2
1.6
2.0
2.4
IC = 5 A
0.1
1
2
3
0.1
0.3
Common emitter
IC/IB = 250
0.3
1
3
10
0.5
1
3
5
10
100
25
Tc =
55°C
0.1
0.3
Common emitter
IC/IB = 250
0.3
1
3
10
0.5
1
3
5
10
100
25
Tc =
55°C
100
0.1
Common emitter
VCE = 3 V
0.3
1
3
10
30
300
500
1000
3000
5000
10000
30000
25
55
Tc = 100°C
0.03
C
C
I
C
– V
CE
0
0
0.5
IB = 0.1 mA
0.2
0.3
3
1
2
Common emitter
Tc = 25°C
2
4
6
8
10
12
2
4
6
8
10
5
8
0
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