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參數(shù)資料
| 型號： | MP4412 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon N Channel MOS Type (Four L2-pi-MOSV inOne) |
| 中文描述： | 硅?頻道馬鞍山類型（四二級-π- MOSV InOne公司） |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 199K |
| 代理商： | MP4412 |
MP4412
2004-07-01
3
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
―
―
±10
μA
Drain cut-off current
I
DSS
V
DS
= 100 V, V
GS
= 0 V
―
―
100
μA
Drain-source breakdown voltage
V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V
100
―
―
V
Gate threshold voltage
V
th
V
DS
= 10 V, I
D
= 1 mA
0.8
―
2.0
V
V
GS
= 4 V, I
D
= 2.5 A
―
0.22
0.30
Drain-source ON resistance
R
DS (ON)
V
GS
= 10 V, I
D
= 2.5 A
―
0.17
0.23
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V, I
D
= 2.5 A
2.0
4.5
―
S
Input capacitance
C
iss
―
500
―
pF
Reverse transfer capacitance
C
rss
―
80
―
pF
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V
f = 1 MHz
―
190
―
pF
Rise time
t
r
―
17
―
Turn-on time
t
on
―
25
―
Fall time
t
f
―
50
―
Switching time
Turn-off time
t
off
V
IN
: t
r
, t
f
< 5 ns, duty
≤
1%, t
w
= 10 μs
―
195
―
μs
Total gate charge
(gate-source plus gate-drain)
Q
g
―
22
―
nC
Gate-source charge
Q
gs
―
15
―
nC
Gate-drain (“miller”) charge
Q
gd
V
DD
≈
80 V, V
GS
= 10 V
I
D
= 5 A
―
7
―
nC
Source-Drain Diode Ratings and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
I
DR
―
―
―
5
A
Pulse drain reverse current
I
DRP
―
―
―
20
A
Diode forward voltage
V
DSF
I
DR
= 5 A, V
GS
= 0 V
―
―
1.7
V
Reverse recovery time
t
rr
―
160
―
ns
Reverse recovery charge
Q
rr
I
DR
= 5 A, V
GS
= 0 V
dI
DR
/dt = 50 A/μs
―
0.28
―
μC
Flyback-Diode Rating and Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
I
FM
―
―
―
5
A
Reverse current
I
R
V
R
= 100 A
―
―
0.4
μA
Reverse voltage
V
R
I
R
= 100 μA
100
―
―
V
Forward voltage
V
F
I
F
= 2 A
―
―
2.3
V
10
V
V
GS
R
L
V
DD
≈
50 V
I
D
= 2.5
A
V
OUT
5
0 V
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