參數(shù)資料
型號(hào): MMSF3300
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: SINGLE TMOS POWER MOSFET 30 VOLTS
中文描述: 6700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù): 8/12頁(yè)
文件大小: 229K
代理商: MMSF3300
8
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 14. Thermal Response — Various Duty Cycles
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
t, TIME (seconds)
R
T
1000
10
1
D = 0.5
SINGLE PULSE
1E–05
1E–04
1E–03
1E–02
1E–01
0.2
0.1
0.01
1E+03
0.1
R
θ
JA(t) = r(t) R
θ
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TA = P(pk) R
θ
JA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
0.02
0.05
Figure 15. Thermal Response — Various
Mounting/Measurement Conditions
t, TIME (seconds)
R
T
10,000
100
10
1E–03
1E–02
1E–01
1E+00
1E+01
1E+02
1E+03
1
1000
Figure 16. Diode Reverse Recovery Waveform
0.01
t, TIME (seconds)
20
40
0.1
0
80
10
1
60
P
Figure 17. Single Pulse Power
Rthja, 1 INCH PAD
Rthjl, MIN PAD
CHIP
JUNCTION
R1
C1
R2
C2
R3
C3
R4
C4
R5
C5
AMBIENT
1
2
3
4
5
0.075
1.11
6.2
74
65.3
1.242
19.55
242
982
18,050
0.073
0.84
14.6
28
39.8
0.412
5.16
123
706
14,646
0.060
0.57
6.4
5.3
2.7
0.016
0.17
2.1
158
6,256
R
C
MIN PAD, ja
R
C
1 INCH, ja
R
C
MIN PAD, jl
Rthja, MIN PAD
1E+00
1E+01
1E+02
DUTY CYCLE
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
NOTE: SPICE
and SABER
model data for Motorola power devices is available at http://design–net.sps.mot.com/home2/models
相關(guān)PDF資料
PDF描述
MMSF3305 SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS
MMSF4N01HD TMOS MOSFET 5.8 AMPERES 20 VOLTS
MMSF5N02HD SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS
MMSF5N03HD SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS
MMSF7P03HDR2 TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMSF3305 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS
MMSF3350R2 制造商:Rochester Electronics LLC 功能描述:- Bulk
MMSF3P02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
MMSF3P02HDR2 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMSF3P02HDR2G 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube