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參數(shù)資料
| 型號(hào)： | MMSF3300 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 6700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 229K |
| 代理商： | MMSF3300 |
1
Motorola TMOS Power MOSFET Transistor Device Data
!
Power Surface Mount Products
WaveFET
devices are an advanced series of power MOSFETs which utilize Motorola’s
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon
area. They are capable of withstanding high energy in the avalanche and commutation
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET
devices are designed for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and power management
in portable and battery powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer additional safety margin
against unexpected voltage transients.
Characterized Over a Wide Range of Power Ratings
Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
Logic Level Gate Drive — Can Be Driven by
Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Miniature SO–8 Surface Mount Package —
Saves Board Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise specified)
Parameter
Symbol
VDSS
VDGR
VGS
VGS
TJ, Tstg
EAS
Value
30
30
±
20
±
16
–55 to 150
Unit
Vdc
Vdc
Vdc
Vdc
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage
Gate–to–Source Voltage
Gate–to–Source Operating Voltage
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 18.8 mH, IL(pk) = 7.3 A, VDS = 30 Vdc)
500
DEVICE MARKING
ORDERING INFORMATION
S3300
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
2500 units
MMSF3300R2
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MMSF3300/D
SEMICONDUCTOR TECHNICAL DATA
CASE 751–06, Style 12
SO–8
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 12.5 m
D
G
S
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
TOP VIEW
Drain
Drain
Drain
Drain
REV 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF3305 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
| MMSF3350R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF3P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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