- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371126 > MMSF3300 (MOTOROLA INC) SINGLE TMOS POWER MOSFET 30 VOLTS PDF資料下載
參數(shù)資料
| 型號： | MMSF3300 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 30 VOLTS |
| 中文描述： | 6700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 229K |
| 代理商： | MMSF3300 |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
—
24
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
0.004
0.5
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.9
4.4
—
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
—
—
10
16
12.5
20
m
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
gFS
3.0
18
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
24 Vdc V
Ciss
Coss
Crss
—
1700
—
pF
Output Capacitance
—
600
—
Transfer Capacitance
—
200
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 6.0
1 0 Ad
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
21
40
ns
Rise Time
—
45
90
Turn–Off Delay Time
—
40
80
Fall Time
)
—
40
80
Turn–On Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 6.0
1 0 Ad
—
12
25
ns
Rise Time
—
12
25
Turn–Off Delay Time
—
55
110
Fall Time
)
—
39
80
Gate Charge
(VDS = 15 Vdc,D
(DS
VGS = 10 Vdc)
2 0 Ad
—
45
60
nC
—
5.1
—
,
—
14
—
—
13
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.78
0.60
1.1
—
Vdc
Reverse Recovery Time
(IS = 3.5 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
3 5 Ad
trr
ta
tb
—
40
—
ns
—
21
—
,
—
19
—
Reverse Recovery Stored Charge
QRR
—
0.043
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperatures.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMSF3305 | SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
| MMSF4N01HD | TMOS MOSFET 5.8 AMPERES 20 VOLTS |
| MMSF5N02HD | SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS |
| MMSF5N03HD | SINGLE TMOS POWER MOSFET 5.0 AMPERES 30 VOLTS |
| MMSF7P03HDR2 | TMOS SINGLE P-CHANNEL FIELD EFFECT TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMSF3305 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
| MMSF3350R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MMSF3P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS |
| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。