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參數(shù)資料
| 型號(hào)： | MMSF3305 |
| 廠商： | Motorola, Inc. |
| 英文描述： | SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS |
| 中文描述： | 功率MOSFET單任務(wù)操作系統(tǒng)9.1安培30伏 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 80K |
| 代理商： | MMSF3305 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
WaveFET
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process. These
miniature surface mount MOSFETs feature ultra low RDS(on) and true
logic level performance. They are capable of withstanding high energy in
the avalanche and commutation modes and the drain–to–source diode
has a very low reverse recovery time. WaveFET
devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage transients.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package — Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO–8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
S3305
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MMSF3305R2
Preferred
devices are Motorola recommended choices for future use and best overall value.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MMSF3305/D
SEMICONDUCTOR TECHNICAL DATA
CASE 751–05, Style 13
SO–8
SINGLE TMOS
POWER MOSFET
9.1 AMPERES
30 VOLTS
RDS(on) = 0.02 OHM
Motorola Preferred Device
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
D
S
G
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| MMSF3350R2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MMSF3P02HDR2 | 功能描述:MOSFET 20V 3A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2G | 功能描述:MOSFET PFET SO8S 20V 5.6A 75mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MMSF3P02HDR2SG | 功能描述:MOSFET P-CH 20V 5.6A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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