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參數(shù)資料
| 型號(hào)： | MMFT960T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 23/34頁 |
| 文件大?。?/td> | 325K |
| 代理商： | MMFT960T3 |
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MMFT960T1
4–81
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
5
0
0.5
0
–55
°C
25
°C
4
3
2
1
VGS = 10 V
TJ = 125°C
R
DS(on)
,DRAIN–SOURC
E
R
E
SIS
TANC
E
(OHMS)
Figure 3. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
1
1.5
2
2.5
10
1
0.1
– 75
– 50
– 25
0
25
50
75
100
125
150
Figure 4. On–Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C)
R
DS(on)
,DRAIN–SOURCE
RESIST
ANCE
(NORMALIZED)
I D
,DRAIN
CURR
E
N
T
(AMPS)
1
0.1
0
VSD, SOURCE–DRAIN DIODE FORWARD VOLTAGE (VOLTS)
0.3
0.6
0.9
1.2
1.5
Figure 5. Source–Drain Diode Forward Voltage
TJ = 125°C
ID = 1 A
VGS = 10 V
250
200
150
100
50
0
5
10
15
20
25
30
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
VGS = 0 V
f = 1 MHz
TJ = 25°C
Ciss
Coss
Crss
V
GS
,G
A
TE
–T
O–SOURC
E
V
O
LT
A
GE
(
V
O
LT
S)
g
FS
,TRANSCONDUCT
ANCE
(mhos)
10
9
8
7
6
5
4
3
2
1
0
0.5
1
1.5
2
2.5
3
3.5
4
2
1.5
1
0.5
0
0.5
0
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Gate Charge versus Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 8. Transconductance
VDS = 10 V
TJ = – 55°C
125
°C
25
°C
TJ = 25°C
225
175
125
75
25
ID = 1 A
TJ = 25°C
VDS = 30 V
VDS = 48 V
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