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參數(shù)資料
| 型號(hào)： | MMPQ2222R1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SO-16 |
| 文件頁(yè)數(shù)： | 1/22頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | MMPQ2222R1 |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Quad General Purpose
Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MMPQ2222
MMPQ2222A
Unit
Collector – Emitter Voltage
VCEO
30
40
Vdc
Collector – Base Voltage
VCB
60
75
Vdc
Emitter – Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Each
Transistor
Four
Transistors
Equal Power
Total Power Dissipation
@ TA = 25°C
Derate above 25
°C
PD
0.52
4.2
1.0
8.0
Watts
mW/
°C
Total Power Dissipation
@ TC = 25°C
Derate above 25
°C
PD
0.8
6.4
2.4
19.2
Watts
mW/
°C
Operating and Storage
Junction Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
MMPQ2222
(IC = 10 mAdc, IB = 0)
MMPQ2222A
V(BR)CEO
30
40
—
Vdc
Collector – Base Breakdown Voltage
MMPQ2222
(IC = 10 mAdc, IE = 0)
MMPQ2222A
V(BR)CBO
60
75
—
Vdc
Emitter – Base Breakdown Voltage
(IB = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
MMPQ2222
(VCB = 60 Vdc, IE = 0)
MMPQ2222A
ICBO
—
50
10
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
—
100
nAdc
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMPQ2222
MMPQ2222A
*Motorola Preferred Device
CASE 751B–05, STYLE 4
SO–16
1
16
*
1
2
3
4
5
6
7
8
10
11
12
13
14
15
16
9
REV 1
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| MMPQ2222R2 | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
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| MMPQ2907AR2 | 600 mA, 60 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ2907R1 | 600 mA, 40 V, 4 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMPQ2369 | 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2369 WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R WAF | 制造商:ON Semiconductor 功能描述: |
| MMPQ2369R2 | 功能描述:兩極晶體管 - BJT 500mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMPQ2907 | 功能描述:兩極晶體管 - BJT PNP Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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