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參數(shù)資料
| 型號： | MMFT960T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封裝： | CASE 318E-04, 4 PIN |
| 文件頁數(shù)： | 12/34頁 |
| 文件大?。?/td> | 325K |
| 代理商： | MMFT960T3 |
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MMFT960T1
4–80
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0, ID = 10 A)
V(BR)DSS
60
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 60 V, VGS = 0)
IDSS
—
10
Adc
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
—
50
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.0
—
3.5
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.0 A)
RDS(on)
—
1.7
Ohms
Drain–to–Source On–Voltage
(VGS = 10 V, ID = 0.5 A)
(VGS = 10 V, ID = 1.0 A)
VDS(on)
—
0.8
1.7
Vdc
Forward Transconductance
(VDS = 25 V, ID = 0.5 A)
gfs
—
600
—
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 V V
0
Ciss
—
65
—
pF
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Coss
—
33
—
Transfer Capacitance
f
1.0 MHz)
Crss
—
7.0
—
Total Gate Charge
(V
10 V I
1 0 A
Qg
—
3.2
—
nC
Gate–Source Charge
(VGS = 10 V, ID = 1.0 A,
VDS = 48 V)
Qgs
—
1.2
—
Gate–Drain Charge
VDS 48 V)
Qgd
—
2.0
—
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
10
8
6
4
2
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURR
E
N
T
(AMPS)
4 V
VGS = 10 V
1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
10
8
6
4
2
0
TJ = – 55°C
TJ = 25°C
5 V
6 V
7 V
0.8
0.6
0.4
0.2
VDS = 10 V
TJ = 125°C
8 V
TJ = 25°C
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