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參數(shù)資料
| 型號： | MMDF7N02ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MMDF7N02ZR2 |
MMDF7N02Z
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
10,000
1000
0.1
1.0
10
100
16
12
8.0
0
4.0
2.0
1.5
1.0
0
0.5
10
8.0
6.0
4.0
0
2.0
0
0.01
0.02
0.03
0.04
0.05
10
8.0
6.0
4.0
0
0.01
0.02
0.03
0.04
15
0.05
2.5
2.0
1.5
1.0
0.5
0
12
15
9.0
6.0
0
3.0
12
2.0
1.5
1.0
0.5
0
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (_C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
VDS ≥ 10 V
TJ = 100_C
25
_C
–55
_C
TJ = 25_C
VGS = 0 V
ID = 7.0 A
TJ = 25_C
VGS = 2.7 V
VGS = 4.5 V
ID = 3.5 A
4.5 V
–50
–25
0
25
50
75
100
125
150
TJ = 125_C
25
_C
100
_C
10 V
1.9 V
VGS = 1.7 V
2.3 V
4.5 V
TJ = 25_C
2.1 V
9.0
6.0
0
I D
,DRAIN
CURRENT
(AMPS)
3.0
0.06
2.0
12
20
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