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參數(shù)資料
| 型號(hào)： | MMDF7N02ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MMDF7N02ZR2 |
MMDF7N02Z
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
16 Vd
V
0 Vd
Ciss
–
450
630
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
350
490
Transfer Capacitance
f = 1.0 MHz)
Crss
–
110
155
SWITCHING CHARACTERISTICS (Note 7.)
Turn–On Delay Time
td(on)
–
31
62
ns
Rise Time
(VDD = 10 Vdc, ID = 1.0 Adc,
VGS =45Vdc
tr
–
230
460
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 ) (Note 6.)
td(off)
–
725
1450
Fall Time
RG 6.0 ) (Note 6.)
tf
–
780
1560
Gate Charge
SFi
8
QT
–
17
24
nC
See Figure 8
(VDS = 12 Vdc, ID = 5.0 Adc,
Q1
–
1.4
–
(VDS 12 Vdc, ID 5.0 Adc,
VGS = 4.5 Vdc) (Note 6.)
Q2
–
6.7
–
Q3
–
6.5
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 7.0 Adc, VGS = 0 Vdc) (Note 6.)
(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
–
0.90
0.84
1.1
–
Vdc
Reverse Recovery Time
trr
–
780
–
ns
(IS = 7.0 Adc, VGS = 0 Vdc,
ta
–
190
–
(IS 7.0 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s) (Note 6.)
tb
–
590
–
Reverse Recovery Stored Charge
QRR
–
5.7
–
C
6. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperatures.
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