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參數(shù)資料
| 型號(hào)： | MMDF7N02ZR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 7000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SO-8 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大?。?/td> | 111K |
| 代理商： | MMDF7N02ZR2 |
MMDF7N02Z
http://onsemi.com
7
I S
,SOURCE
CURRENT
t, TIME
Figure 11. Reverse Recovery Time (trr)
di/dt = 300 A/
s
Standard Cell Density
High Cell Density
tb
trr
ta
trr
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance –
General Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded, and that the
transition time (tr, tf) does not exceed 10 s. In addition the
total power averaged over a complete switching cycle must
not exceed (TJ(MAX) – TC)/(R
θJC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and must be adjusted for operating
conditions differing from those specified. Although industry
practice is to rate in terms of energy, avalanche energy
capability is not a constant. The energy rating decreases
non–linearly with an increase of peak current in avalanche
and peak junction temperature.
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.0
10
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 4.5 V
SINGLE PULSE
TC = 25_C
10
0.01
dc
10 ms
1.0
100
1.0 ms
100
S
0.1
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