參數(shù)資料
型號(hào)： MMDF3C03HD
廠商： Motorola, Inc.
英文描述： COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS
中文描述： 互補(bǔ)對(duì)偶的TMOS功率場(chǎng)效應(yīng)晶體管30伏
文件頁數(shù)： 3/12頁
文件大?。?/td> 272K
代理商： MMDF3C03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 3. On–Resistance versus
Gate–To–Source Voltage
2.9 V
2.7 V
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
6.0
4.0
5.0
3.0
I
2.0
1.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
1.8
TJ = 25
°
C
3.1 V
3.3 V
3.5 V
3.7 V
3.9 V
VGS = 10 V
6.0 V
4.1 V
4.5 V
4.3 V
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
4.0
2.0
1.0
0
I
D
2.0
2.5
3.0
3.5
4.0
3.0
5.0
6.0
,
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.8
0.4
0.3
0.2
0.1
0
9.0
R
3.0
4.0
5.0
6.0
7.0
,
D
0.5
TJ = 25
°
C
ID = 3 A
0.6
0.7
1.2
2.0
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
12
8.0
10
6.0
I
4.0
2.0
0
0.6
0.2
0.4
0.8
1.0
1.4
1.6
1.8
TJ = 25
°
C
2.7 V
2.9 V
3.1 V
3.3 V
3.5 V
VGS = 2.5 V
10 V
6.0 V
4.5 V
4.3 V
4.1 V
3.7 V
3.9 V
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.5
5.0
1.5
8.0
4.0
2.0
0
I
D
2.0
2.5
3.0
3.5
4.0
6.0
10
12
,
VDS
≥
10 V
TJ = –55
°
C
100
°
C
25
°
C
8.0
10
2.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0.30
0.20
0.15
0.10
0.05
0
9.0
R
3.0
4.0
5.0
6.0
7.0
,
D
0.25
TJ = 25
°
C
ID = 6 A
相關(guān)PDF資料
PDF描述
MMDF3N02HDR2 TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR
MMDF3NO2HD TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR
MMDF3N02HD DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS
MMDF3N03HD DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS
MMDF3N03HD Power MOSFET 3 Amps, 30 Volts
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF3N02HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 20 Volts N-Channel SO-, DuaL
MMDF3N02HDR2 功能描述:MOSFET 20V 3A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF3N02HDR2G 功能描述:MOSFET NFET SO8D 20V 3.8A 90mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF3N03HD 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 3 Amps, 30 Volts
MMDF3N03HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 4.1A 8-Pin SOIC T/R
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*