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參數(shù)資料
| 型號： | MMDF3C03HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS |
| 中文描述： | 互補(bǔ)對偶的TMOS功率場效應(yīng)晶體管30伏 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 272K |
| 代理商： | MMDF3C03HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25
mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
—
30
—
—
Vdc
IDSS
(N)
(P)
—
—
—
—
1.0
1.0
μ
Adc
IGSS
—
—
—
±
100
nAdc
VGS(th)
—
—
1.0
—
—
—
—
—
Vdc
mV/
°
C
Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 10 Vdc, ID = 3.5 Adc)
RDS(on)1
(N)
(P)
—
—
0.037
0.075
0.05
0.10
Ohms
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 2.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)2
(N)
(P)
—
—
0.55
0.12
0.08
0.16
Ohms
Forward Transconductance
(VDS = 15 Vdc, ID = 3.5 Adc)
gFS
(N)
(P)
—
—
9.0
6.0
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
(P)
—
—
430
425
600
600
pF
Output Capacitance
Coss
(N)
(P)
—
—
217
209
300
300
Transfer Capacitance
Crss
(N)
(P)
—
—
67.5
57.2
135
80
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vdc,
ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0
)
td(on)
(N)
(P)
—
—
8.2
11.7
16.4
23.4
ns
Rise Time
tr
(N)
(P)
—
—
8.48
15.8
16.9
31.6
Turn–Off Delay Time
,
td(off)
(N)
(P)
—
—
89.6
167.3
179
334.6
Fall Time
tf
(N)
(P)
—
—
61.1
102.6
122
205.2
Total Gate Charge
(See Figure 8)
(VDS = 10 Vd
ID= 3 5 Adc
ID = 3.5 Adc,
VGS = 10 Vdc)
QT
(N)
(P)
—
—
15.7
14.8
31.4
29.6
nC
Q1
(N)
(P)
—
—
2.0
1.7
—
—
Q2
(N)
(P)
—
—
4.6
4.7
—
—
Q3
(N)
(P)
—
—
3.9
3.4
—
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(2)
(IS = 1.7 Adc, VGS = 0 Vdc)
(IS = –1.7 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
—
—
0.77
0.90
1.2
1.2
Vdc
Reverse Recovery Time
(N)
(ID = 3.5 Adc,
(D
VGS = 0 Vdc
dIS/dt = 100 A/
μ
s)
trr
(N)
(P)
—
—
54.5
77.4
—
—
ns
ta
(N)
(P)
—
—
14.8
19.9
—
—
(P)
(ID = 3.5 Adc,
(D
VGS = 0 Vdc
dIS/dt = 100 A/
μ
s)
tb
(N)
(P)
—
—
39.7
57.5
—
—
Reverse Recovery Stored Charge
QRR
(N)
(P)
—
—
0.048
0.088
—
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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