參數(shù)資料
型號(hào): MMDF3207
廠商: MOTOROLA INC
元件分類: 小信號(hào)晶體管
英文描述: DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS
中文描述: 7800 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MINIATURE, CASE 751-06, SO-8
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 84K
代理商: MMDF3207
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise specified)
Characteristics
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Maximum
20
12
±
1
2
62.5
2.0
16
7.8
5.7
40
Unit
V
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M )
Gate–to–Source Voltage — Continuous
1 Inch Square @
10 seconds on
FR–4 or G–10 PCB
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Continuous @ TA = 70
°
C
Drain Current
— Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
1 Inch Square @
Steady State on
FR–4 or G–10 PCB
ID
ID
IDM
RTHJA
PD
98
1.28
10.2
6.2
4.6
35
Minimum Pad @
Steady State on
FR–4 or G–10 PCB
ID
ID
IDM
TJ, Tstg
166
0.75
6.0
4.8
3.5
30
Operating and Storage Temperature Range
–55 to 150
(1) Repetitive rating; pulse width limited by maximum junction temperature.
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