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參數(shù)資料
| 型號： | MMDF3200Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS |
| 中文描述： | 7100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MINIATURE, CASE 751-05, SO-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 86K |
| 代理商： | MMDF3200Z |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
—
—
TBD
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
12 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
TBD
1.0
A
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
—
0.8
TBD
1.2
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 11.5 Adc)
(VGS = 2.5 Vdc, ID = 5.9 Adc)
RDS(on)
—
—
TBD
TBD
15
25
m
Forward Transconductance (VDS = 8.0 Vdc, ID = 3.0 Adc)
gFS
5.0
TBD
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
15 Vdc V
Ciss
Coss
Crss
—
TBD
TBD
pF
Output Capacitance
—
TBD
TBD
Transfer Capacitance
—
TBD
TBD
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 16 Vdc, ID = 11.5 Adc,
VGS= 4 5 Vdc
VGS = 4.5 Vdc,
RG = 10
11 5 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
TBD
TBD
ns
Rise Time
—
TBD
TBD
Turn–Off Delay Time
—
TBD
TBD
Fall Time
)
—
TBD
TBD
Gate Charge
See Figure 8
(VDS = 16 Vdc, ID = 11.5 Adc,
(DS
,D
VGS = 4.5 Vdc)
11 5 Ad
—
TBD
TBD
nC
—
TBD
—
—
TBD
—
—
TBD
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 11.5 Adc, VGS = 0 Vdc)
(IS = 11.5 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
TBD
TBD
1.2
—
Vdc
Reverse Recovery Time
(IS = 11.5 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
11 5 Ad
trr
ta
tb
—
TBD
—
ns
—
TBD
—
,
—
TBD
—
Reverse Recovery Stored Charge
QRR
—
TBD
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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