參數(shù)資料
型號(hào)： MMDF2C03HDR2
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 9/12頁
文件大?。?/td> 381K
代理商： MMDF2C03HDR2
MMDF2C03HD
6
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel
P–Channel
Figure 7. Capacitance Variation
C,
CAP
ACIT
ANCE
(pF)
10
0
10
15
25
TJ = 25°C
VDS = 0 V VGS = 0 V
1000
800
600
400
200
0
20
Ciss
Coss
Crss
5
Ciss
Crss
30
1200
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
C,
CAP
ACIT
ANCE
(pF)
400
600
800
1200
1000
10
0
10
15
20
30
VGS
VDS
5
Crss
TJ = 25°C
200
25
Ciss
VDS = 0 V VGS = 0 V
Ciss
Coss
Crss
0
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS
VDS
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
0
2
4
6
8
ID = 3 A
TJ = 25°C
VGS
6
3
0
12
9
24
18
12
6
0
VDS
QT
Q1
Q2
Q3
10
12
t,
TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1000
1
100
10
1
VDD = 15 V
ID = 3 A
VGS = 10 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
24
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(VOL
TS)
20
16
12
8
4
0
10
6
2
0
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
12
8
4
2
4
6
8
16
ID = 2 A
TJ = 25°C
10
12
14
VDS
VGS
QT
Q2
Q3
Q1
RG, GATE RESISTANCE (OHMS)
1
10
100
1000
100
10
1
t,
TIME
(ns)
VDD = 15 V
ID = 2 A
VGS = 10 V
TJ = 25°C
tr
tf
td(off)
td(on)
Qg, TOTAL GATE CHARGE (nC)
V
DS
,DRAIN–T
O–SOURCE
VOL
TAGE
(VOL
TS)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF2C03HDR2G 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2C03HDR2G 制造商:ON Semiconductor 功能描述:MOSFET
MMDF2N02E 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual
MMDF2N02ER2 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2N02ER2G 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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