參數(shù)資料
型號： MMDF2C03HDR2
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： 2 A, 30 V, 0.09 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 7/12頁
文件大?。?/td> 381K
代理商： MMDF2C03HDR2
MMDF2C03HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
N–Channel
P–Channel
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 3. On–Resistance versus
Gate–To–Source Voltage
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.4
0.5
0.6
0.3
0.1
0.2
0
2
3
4
5
8
6
7
9
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID = 1.5 A
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0.05
ID, DRAIN CURRENT (AMPS)
0.08
0
0.5
1
2.5
3
0.06
0.07
1.5
2
10 V
VGS = 4.5
TJ = 25°C
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.5 A
125
75
25
– 25
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
0.5
1
1.5
2
4
0.10
0.15
0.20
0.25
0.30
TJ = 25°C
VGS = 4.5 V
2.5
3
3.5
10 V
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
1
2
3
4
10
0
0.1
0.3
0.4
0.6
ID = 1 A
TJ = 25°C
0.2
5
6
7
8
9
0.5
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
TJ, JUNCTION TEMPERATURE (°C)
– 50
0
50
100
150
0.6
VGS = 10 V
ID = 2 A
1.4
(NORMALIZED)
– 25
25
75
125
0.8
1.6
1.2
1.0
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDF2C03HDR2G 功能描述:MOSFET COMP S08C 30V 4.1A 70mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2C03HDR2G 制造商:ON Semiconductor 功能描述:MOSFET
MMDF2N02E 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 25 Volts N−Channel SO−8, Dual
MMDF2N02ER2 功能描述:MOSFET 25V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MMDF2N02ER2G 功能描述:MOSFET NFET SO8D 25V 3.6A 100mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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