- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382338 > MMBV2109LT1 (ON SEMICONDUCTOR) Silicon Tuning Diodes PDF資料下載
參數(shù)資料
| 型號(hào)： | MMBV2109LT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diodes |
| 中文描述： | HF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 封裝： | PLASTIC, CASE 318-08, TO-236, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | MMBV2109LT1 |
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3
1
Publication Order Number:
MMBV2101LT1/D
MMBV2101LT1 Series,
MV2105, MV2101, MV2109,
LV2205, LV2209
Silicon Tuning Diodes
6.8–100 pF, 30 Volts
Voltage Variable Capacitance Diodes
These devices are designed in popular plastic packages for the high
volume requirements of FM Radio and TV tuning and AFC, general
frequency control and tuning applications. They provide solid–state
reliability in replacement of mechanical tuning methods. Also
available in a Surface Mount Package up to 33 pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance – 10%
Complete Typical Design Curves
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
IF
PD
30
Vdc
Forward Current
200
mAdc
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
MMBV21xx
@ TA = 25
°
C
Derate above 25
°
C
MV21xx
LV22xx
225
1.8
280
2.8
mW
mW/
°
C
Junction Temperature
TJ
Tstg
+150
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
MV2101 = MV2101
MV2105 = MV2105
MV2109 = MV2109
LV2205 = LV2205
LV2209 = LV2209
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10
μ
Adc)
MMBV21xx, MV21xx
LV22xx
V(BR)R
30
25
–
–
–
–
Vdc
Reverse Voltage Leakage
Current
(VR = 25 Vdc, TA = 25
°
C)
IR
–
–
0.1
μ
Adc
Diode Capacitance
Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
–
280
–
ppm/
°
C
http://onsemi.com
Preferred
devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
1
2
3
1
2
XX
XXXX
YWW
TO–226AC, TO–92
CASE 182
STYLE 1
TO–236AB, SOT–23
CASE 318–08
STYLE 8
XXX M
XXX
M
* See Table
= Device Code*
= Date Code
XX
XXXX
M
* See Table
= Device Code Line 1*
= Device Code Line 2*
= Date Code
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBV2109LT1 | Silicon Tuning Diode |
| MMBZ5235BS-7-F | surface mount silicon Zener diodes |
| MMBZ5233BS-7-F | surface mount silicon Zener diodes |
| MMBZ5234BS-7-F | surface mount silicon Zener diodes |
| MMBZ5236BS-7-F | surface mount silicon Zener diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV2109LT1G | 功能描述:變?nèi)荻O管 30V 29.7pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV3102 | 制造商:LRC 制造商全稱:Leshan Radio Company 功能描述:Silicon Tuning Diode |
| MMBV3102LT1 | 功能描述:變?nèi)荻O管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV3102LT1G | 功能描述:變?nèi)荻O管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV3102LT1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diode |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。