參數(shù)資料
型號： MMBT3416LT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號晶體管
英文描述： General Purpose Amplifier(NPN Silicon)
中文描述： 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, TO-236, 3 PIN
文件頁數(shù)： 6/8頁
文件大?。?/td> 297K
代理商： MMBT3416LT3
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 19. Thermal Response
t, TIME (ms)
1.0
0.7
0.01
r
(
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k 2.0 k
5.0 k 10 k
20 k
50 k
100 k
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
Z
θ
JA(t) = r(t)
R
θ
JA
TJ(pk) – TA = P(pk) Z
θ
JA(t)
t1
t2
P(pk)
FIGURE 19A
Figure 19A.
TJ, JUNCTION TEMPERATURE (
°
C)
104
–4
0
I
Figure 20.
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
400
2.0
I
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by the model
as shown in Figure 19A. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 19 was calculated for various duty cycles.
To find Z
θ
JA(t), multiply the value obtained from Figure 19 by the
steady state value R
θ
JA.
Example:
The MPS3904 is dissipating 2.0 watts peak under the following
conditions:
t1 = 1.0 ms, t2 = 5.0 ms. (D = 0.2)
Using Figure 19 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
The peak rise in junction temperature is therefore
T = r(t) x P(pk) x R
θ
JA = 0.22 x 2.0 x 200 = 88
°
C.
For more information, see AN–569.
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 20 is based upon TJ(pk) = 150
°
C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk)
≤
150
°
C. TJ(pk) may be calculated from
the data in Figure 19. At high case or ambient temperatures, thermal
limitations will reduce the power that can be handled to values less
than the limitations imposed by second breakdown.
10–2
10–1
100
101
102
103
–2
0
0
+20
+40
+60
+80
+100 +120 +140 +160
VCC = 30 Vdc
ICEO
ICBO
AND
ICEX @ VBE(off) = 3.0 Vdc
TA = 25
°
C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0 ms
10
μ
s
TC = 25
°
C
1.0 s
dc
dc
4.0
6.0
10
20
40
60
100
200
4.0
6.0
8.0
10
20
40
TJ = 150
°
C
100
μ
s
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