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參數(shù)資料
| 型號： | MMBF5484LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | JFET Transistor |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 294K |
| 代理商： | MMBF5484LT1 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
N
2.0
VDS, DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
0
10
2.0
4.0
6.0
8.0
0
4.0
6.0
8.0
10
12
14
ID = 5.0 mA
100 MHz
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
N
2.0
ID, DRAIN CURRENT (mA)
1.5
6.5
2.5
3.5
4.5
5.5
0
4.0
6.0
8.0
10
12
14
Figure 3. Effects of Drain–Source Voltage
Figure 4. Effects of Drain Current
NOISE FIGURE
(Tchannel = 25
°
C)
*L1
17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32
″
ceramic coil
form. Tuning provided by a powdered iron slug.
4–1/2 turns, AWG #18 enameled copper wire, 5/16
″
long,
3/8
″
I.D. (AIR CORE).
3–1/2 turns, AWG #18 enameled copper wire, 1/4
″
long,
3/8
″
I.D. (AIR CORE).
*
L2
*
L3
**L1
6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32
″
ceramic coil
form. Tuning provided by an aluminum slug.
1 turn, AWG #16 enameled copper wire, 3/8
″
I.D.
(AIR CORE).
1/2 turn, AWG #16 enameled copper wire, 1/4
″
I.D.
(AIR CORE).
**
L2
**
L3
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE:
The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation
VALUE
100 MHz
400 MHz
C1
7.0 pF
1.8 pF
C2
1000 pF
17 pF
C3
3.0 pF
1.0 pF
C4
1–12 pF
0.8–8.0 pF
C5
1–12 pF
0.8–8.0 pF
C6
0.0015
μ
F
0.001
μ
F
C7
0.0015
μ
F
0.001
μ
F
L1
3.0
μ
H*
0.2
μ
H**
L2
0.15
μ
H*
0.03
μ
H**
L3
0.14
μ
H*
0.022
μ
H**
INPUT
TO 50
SOURCE
NEUTRALIZING
COIL
L1
C5
L3
Rg
′
C1
C6
C4
L2
C3
TO 500
LOAD
CASE
C7
COMMON
VDS
+15 V
ID = 5.0 mA
VGS
C2
Pin, INPUT POWER PER TONE (dB)
+40
Figure 5. Third Order Intermodulation Distortion
o
16
18
20
f = 400 MHz
f = 400 MHz
100 MHz
VDS = 15 V
VGS = 0 V
+20
0
–20
–40
–60
–80
–100
–120
–140
–160
–120
–100
–80
–60
–40
–20
0
+20
3RD ORDER INTERCEPT
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
INTERMODULATION CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBF5484LT1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET Transistor N−Channel |
| MMBF5484LT1G | 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| MMBF5484LT1G | 制造商:ON Semiconductor 功能描述:TRANSISTOR JFET N-CHANNEL 3MA I(DSS) |
| MMBF5485 | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| MMBF5485_Q | 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導 gFS（最大值/最小值）: 電阻汲極/源極 RDS（導通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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