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參數(shù)資料
| 型號： | MMBR5031LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Frequency Transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | MMBR5031LT1 |
1
MMBR5031LT1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1995
The RF Line
!
Designed for thick and thin–film circuits using surface mount components
and requiring low–noise, high–gain signal amplification at frequencies to 1.0
GHz.
High Gain — Gpe = 17 dB Typ @ f = 450 MHz
Low Noise — NF = 2.5 dB Typ @ f = 450 MHz
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
10
Vdc
Collector–Base Voltage
15
Vdc
Emitter–Base Voltage
3.0
Vdc
Collector Current — Continuous
20
mAdc
Maximum Junction Temperature
150
°
C
Power Dissipation, Tcase = 75
°
C (1)
Derate linearly above Tcase = 75
°
C @
THERMAL CHARACTERISTICS
0.300
4.00
W
mW/
°
C
Characteristic
Symbol
Max
Unit
Storage Temperature
Tstg
R
θ
JC
–55 to +150
°
C
Thermal Resistance Junction to Case
250
°
C/W
DEVICE MARKING
MMBR5031LT1 = 7G
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.01 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0)
Collector Cutoff Current (VCB = 6.0 Vdc, IE = 0)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
10
—
—
Vdc
15
—
—
Vdc
3.0
—
—
Vdc
—
—
10
nAdc
DC Current Gain (IC = 1.0 mAdc, VCE = 6.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
hFE
25
—
300
—
Current–Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCE = 6.0 Vdc, IE = 0, f = 0.1 MHz)
Minimum Noise Figure (IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
Common–Emitter Amplifier Power Gain
(IC = 1.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz)
NOTE:
1.Case temperature measured on collector lead immediately adjacent to body of package.
fT
—
1,000
—
MHz
Ccb
—
—
1.5
pF
NFmin
Gpe
—
2.5
—
dB
—
17
25
dB
Order this document
by MMBR5031LT1/D
SEMICONDUCTOR TECHNICAL DATA
RF AMPLIFIER
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
REV 7
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