參數(shù)資料
型號(hào)： MMBF5484LT1
廠商： MOTOROLA INC
元件分類： 小信號(hào)晶體管
英文描述： JFET Transistor
中文描述： VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236AB
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 294K
代理商： MMBF5484LT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
N–Channel
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDG
VGS(r)
IG(f)
PD
25
Vdc
Reverse Gate–Source Voltage
25
Vdc
Forward Gate Current
10
mAdc
Continuous Device Dissipation at or Below
TC = 25
°
C
Linear Derating Factor
200
2.8
mW
mW/
°
C
Storage Channel Temperature Range
Tstg
–65 to +150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
556
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBF5484LT1 = 6B
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –1.0
μ
Adc, VDS = 0)
V(BR)GSS
–25
—
Vdc
Gate Reverse Current
(VGS = –20 Vdc, VDS = 0)
(VGS = –20 Vdc, VDS = 0, TA = 100
°
C)
IGSS
—
—
–1.0
–0.2
nAdc
μ
Adc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
VGS(off)
–0.3
–3.0
Vdc
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
SMALL–SIGNAL CHARACTERISTICS
IDSS
1.0
5.0
mAdc
Forward Transfer Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|Yfs|
3000
6000
μ
mhos
Output Admittance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
|yos|
—
50
μ
mhos
1. FR–5 = 1.0
0.75
0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBF5484LT1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMBF5484LT1_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:JFET Transistor N−Channel
MMBF5484LT1G 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
MMBF5484LT1G 制造商:ON Semiconductor 功能描述:TRANSISTOR JFET N-CHANNEL 3MA I(DSS)
MMBF5485 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
MMBF5485_Q 功能描述:射頻JFET晶體管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
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