參數(shù)資料
型號(hào): MMBFJ177LT1
廠商: MOTOROLA INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: JFET Chopper
中文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 57K
代理商: MMBFJ177LT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1997
P–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Gate Voltage
VDG
VGS(r)
25
Vdc
Reverse Gate–Source Voltage
–25
Vdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25
°
C
Derate above 25
°
C
PD
225
1.8
mW
mW/
°
C
Thermal Resistance, Junction to Ambient
RJA
TJ, Tstg
556
°
C/W
Junction and Storage Temperature
–55 to +150
°
C
DEVICE MARKING
MMBFJ177LT1 = 6Y
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(VDS = 0, ID = 1.0
μ
Adc)
V(BR)GSS
30
Vdc
Gate Reverse Current
(VDS = 0 Vdc, VGS = 20 Vdc)
IGSS
1.0
nAdc
Gate Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(2)
(VGS = 0, VDS = 15 Vdc)
VGS(off)
0.8
2.5
Vdc
IDSS
1.5
20
mAdc
Drain Cutoff Current
(VDS = 15 Vdc, VGS = 10 Vdc)
ID(off)
1.0
nAdc
Drain Source On Resistance
(ID = 500
μ
Adc)
rDS(on)
300
Input Capacitance
VDS = 0, VGS = 10 Vdc
f = 1.0 MHz
Ciss
Crss
11
pF
Reverse Transfer Capacitance
5.5
1. FR–5 = 1.0
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle
2%.
0.75
0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBFJ177LT1/D
SEMICONDUCTOR TECHNICAL DATA
1
2
3
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
3
GATE
1 DRAIN
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