- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98018 > MJE16204 (ON SEMICONDUCTOR) 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | MJE16204 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MJE16204 |
MJE16204
http://onsemi.com
5
I C
,COLLECT
OR
CURRENT
(AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Maximum Forward Biased
Safe Operating Area
7
3
10
1
0.02
70
SECONDARY BREAK
DOWN
WIREBOND LIMIT
THERMAL LIMIT
I C
,COLLECT
OR
CURRENT
(AMPS)
0.1
7
20
250
3
0.3
0.2
d
c
TC = 25°C
1ms
10 s
2
5
0.5
50
7
0
150
550
IC/IB1 ≥ 5
TJ ≤
100°C
VBE(off) = 5 V
50
VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)
350
VBE(off) = 0 V
Figure 8. Maximum Reverse Biased
Safe Operating Area
3
5
2
1
250
450
0.03
0.07
0.05
0.01
0.7
100
5
10
200
30
MJE16204
6
4
SAFE OPERATING AREA
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25
_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25
_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 7 may be found at
any case temperature by using the appropriate curve on
Figure 9.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases,
with the base–to–emitter junction reverse biased. Under
these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This
can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc.
TC, CASE TEMPERATURE (°C)
0
40
120
160
0.6
POWER
DERA
TING
F
ACT
OR
SECOND BREAK
DOWN DERATING
1
0.8
0.4
0.2
60
100
140
80
THERMAL
DERATING
2
0
Figure 9. Power Derating
The safe level for these devices is specified as Reverse
Biased
Safe
Operating
Area
and
represents
the
voltage–current condition allowable during reverse biased
turnoff. This rating is verified under clamped conditions so
that the device is never subjected to an avalanche mode.
Figure 8 gives the RBSOA characteristics.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE18002D2AS | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2DW | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2BG | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2AU | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
| MJE18002D2BU | 2 A, 450 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE170 | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170G | 功能描述:兩極晶體管 - BJT 3A 40V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE170STU | 功能描述:兩極晶體管 - BJT PNP Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE171 | 功能描述:兩極晶體管 - BJT 3A 60V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE171_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS |
發(fā)布緊急采購，3分鐘左右您將得到回復。