參數(shù)資料
型號(hào): MJE16204
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 6 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 123K
代理商: MJE16204
MJE16204
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MJE16204
Unit
Collector–Emitter Breakdown Voltage
VCES
550
Vdc
Collector–Emitter Sustaining Voltage
VCEO(sus)
250
Vdc
Emitter–Base Voltage
VEBO
8.0
Vdc
RMS Isolation Voltage(2)
Per Fig. 14
(for 1 sec, TA = 25_C,
Per Fig. 15
Rel. Humidity < 30%)
Per Fig. 16
VISOL
V
Collector Current — Continuous
— Pulsed (1)
IC
ICM
6.0
8.0
Adc
Base Current — Continuous
— Pulsed (1)
IB
IBM
2.0
4.0
Adc
Repetitive Emitter–Base Avalanche Energy
W(BER)
0.2
mJ
Total Power Dissipation @ TC = 25_C
Total Power Dissipation @ TC = 100_C
Derated above TC = 25_C
PD
80
32
0.64
Watts
W/
_C
Operating and Storage Temperature Range
TJ, Tstg
–55 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
RθJC
1.56
_C/W
Lead Temperature for Soldering Purposes
1/8
″ from the case for 5 seconds
TL
260
_C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v 10%.
(2) Proper strike and creepage distance must be provided.
*Measurement made with thermocouple contacting the bottom insulated mounting surface of the
package (in a location beneath the die), the device mounted on a heatsink thermal grease applied,
and a mounting torque of 6 to 8 in
Slbs.
相關(guān)PDF資料
PDF描述
MJE18002D2AS 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002D2DW 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002D2BG 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002D2AU 2 A, 450 V, NPN, Si, POWER TRANSISTOR
MJE18002D2BU 2 A, 450 V, NPN, Si, POWER TRANSISTOR
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