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參數(shù)資料
| 型號(hào)： | MJE13009 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS |
| 中文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 451K |
| 代理商： | MJE13009 |
3–683
Motorola Bipolar Power Transistor Device Data
100
1000
230
160
200
320
5
25
630
72
26
10
100
100
800
32
24
4
54
NOTE: All Data recorded In the Inductive Switching Circuit In Table 1.
SWITCHING TIME NOTES
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
trv = Voltage Rise Time, 10–90% VCEM
tfi = Current Fall Time, 90–10% ICM
tti = Current Tail, 10–2% ICM
tc = Crossover Time, 10% VCEM to 10% ICM
An enlarged portion of the turn–off waveforms is shown in
Figure 13 to aid in the visual identity of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222:
PSWT = 1/2 VCCIC(tc) f
Typical inductive switching waveforms are shown in Fig-
ure 14. In general, trv + tfi
tc. However, at lower test cur-
rents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25 C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100 C.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13009 | Mini size of Discrete semiconductor elements |
| MJE13009R | Mini size of Discrete semiconductor elements |
| MJE13009 | POWER TRANSISTORS(12A,300-400V,100W) |
| MJE1320 | POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS |
| MJE1320 | POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13009 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
| MJE13009_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS |
| MJE13009_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
| MJE13009D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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