- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371116 > MJE13009 (MOTOROLA INC) 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS PDF資料下載
參數(shù)資料
| 型號： | MJE13009 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS |
| 中文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 451K |
| 代理商： | MJE13009 |
3–681
Motorola Bipolar Power Transistor Device Data
VOLTAGE REQUIREMENTS (continued)
In the four application examples (Table 2) load lines are
shown in relation to the pulsed forward and reverse biased
SOA curves.
In circuits A and D, inductive reactance is clamped by the
diodes shown. In circuits B and C the voltage is clamped by
the output rectifiers, however, the voltage induced in the pri-
mary leakage inductance is not clamped by these diodes and
could be large enough to destroy the device. A snubber net-
work or an additional clamp may be required to keep the
turn–off load line within the Reverse Bias SOA curve.
Load lines that fall within the pulsed forward biased SOA
curve during turn–on and within the reverse bias SOA curve
during turn–off are considered safe, with the following as-
sumptions:
(1) The device thermal limitations are not exceeded.
(2) The turn–on time does not exceed 10
μ
s (see standard
pulsed forward SOA curves in Figure 1).
(3) The base drive conditions are within the specified limits
shown on the Reverse Bias SOA curve (Figure 2).
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the re-
quired current level with good fall time, high energy handling
capability and low saturation voltage. On this data sheet,
these parameters have been specified at 8 amperes which
represents typical design conditions for these devices. The
current drive requirements are usually dictated by the
VCE(sat) specification because the maximum saturation volt-
age is specified at a forced gain condition which must be du-
plicated or exceeded in the application to control the
saturation voltage.
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the tran-
sistor power dissipation occurs during the fall time (tfi). For
this reason considerable effort is usually devoted to reducing
the fall time. The recommended way to accomplish this is to
reverse bias the base–emitter junction during turn–off. The
reverse biased switching characteristics for inductive loads
are discussed in Figure 11 and Table 3 and resistive loads in
Figures 13 and 14. Usually the inductive load component will
be the dominant factor in SWITCHMODE applications and
the inductive switching data will more closely represent the
device performance in actual application. The inductive
switching characteristics are derived from the same circuit
used to specify the reverse biased SOA curves, (See Table
1) providing correlation between test procedures and actual
use conditions.
Figure 11. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
Figure 12. Turn–Off Time
tr
td @ VBE(off) = 5 V
100
50
1K
700
500
IC, COLLECTOR CURRENT (AMP)
0.7
3
1
2
0.2
VCC = 125 V
IC/IB = 5
TJ = 25
°
C
0.5
200
300
t
0.3
200
100
2K
1K
700
VCC = 125 V
IC/IB = 5
TJ = 25
°
C
300
500
t
70
7
5
10
20
0.7
1
2
0.2
0.5
0.3
7
5
10
20
ts
tf
Figure 13. Inductive Switching Measurements
TIME
Figure 14. Typical Inductive Switching Waveforms
(at 300 V and 12 A with IB1 = 2.4 A and VBE(off) = 5 V)
TIME 20 ns/DIV
IC
VCE
IC
VCE
C
V
IC
Vclamp
IB
90% IB1
10%
VCEM
10%
ICM
2%
IC
Vclamp
90% VCEM
90% IC
tfi
tsv
trv
tti
tc
RESISTIVE SWITCHING PERFORMANCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13009 | Mini size of Discrete semiconductor elements |
| MJE13009R | Mini size of Discrete semiconductor elements |
| MJE13009 | POWER TRANSISTORS(12A,300-400V,100W) |
| MJE1320 | POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS |
| MJE1320 | POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13009 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
| MJE13009_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS |
| MJE13009_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
| MJE13009D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。