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參數(shù)資料
| 型號(hào)： | MJE13009 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS |
| 中文描述： | 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 451K |
| 代理商： | MJE13009 |
3–676
Motorola Bipolar Power Transistor Device Data
!
The MJE13009 is designed for high–voltage, high–speed power switching inductive
circuits where fall time is critical. They are particularly suited for 115 and 220 V
switchmode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
SPECIFICATION FEATURES:
VCEO(sus) 400 V and 300 V
Reverse Bias SOA with Inductive Loads @ TC = 100 C
Inductive Switching Matrix 3 to 12 Amp, 25 and 100 C
. . . tc @ 8 A, 100 C is 120 ns (Typ).
700 V Blocking Capability
SOA and Switching Applications Information.
Rating
Collector–Emitter Voltage
Symbol
IC
ICM
Value
400
Unit
Vdc
Collector–Emitter Voltage
700
Vdc
Emitter Base Voltage
9
Vdc
Collector Current — Continuous
— Peak (1)
12
24
Adc
Base Current — Continuous
IB
6
Adc
— Peak (1)
36
Derate above 25 C
16
mW/ C
Total Power Dissipation @ TC = 25 C
PD
100
Watts
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
R
θ
JA
R
θ
JC
TL
Max
62.5
Unit
C/W
Thermal Resistance, Junction to Case
1.25
C/W
Maximum Lead Temperature for Soldering Purposes:
275
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE13009/D
12 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS
100 WATTS
*Motorola Preferred Device
TO–220AB
REV 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJE13009 | Mini size of Discrete semiconductor elements |
| MJE13009R | Mini size of Discrete semiconductor elements |
| MJE13009 | POWER TRANSISTORS(12A,300-400V,100W) |
| MJE1320 | POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS |
| MJE1320 | POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJE13009 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-220 |
| MJE13009_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS |
| MJE13009_12 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS |
| MJE13009D | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| MJE13009DG-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
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