- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371116 > MJE1320 (ON SEMICONDUCTOR) POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | MJE1320 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 中文描述： | 2 A, 900 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 281K |
| 代理商： | MJE1320 |
1
Motorola Bipolar Power Transistor Device Data
Switchmode Series
This transistor is designed for high–voltage, power switching in inductive circuits
where RBSOA and breakdown voltage are critical. They are particularly suited for
line–operated switchmode applications.
Typical Applications:
Fluorescent Lamp Ballasts
Inverters
Solenoid and Relay Drivers
Motor Controls
Deflection Circuits
Features:
High VCEV Capability (1800 Volts)
Low Saturation Voltage
100 C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
IC
ICM
Collector Current — Continuous
Peak(1)
2
5
Adc
Base Current — Continuous
IB
1.5
Adc
Derate above 25 C
0.64
Operating and Storage Junction Temperature Range
TJ, Tstg
–65 to +150
W/ C
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
Max
1.56
Unit
C/W
Maximum Lead Temperature for Soldering
275
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
SWITCHMODE is a trademark of Motorola, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1320/D
POWER TRANSISTOR
2 AMPERES
900 VOLTS
80 WATTS
CASE 221A–06
TO–220AB
相關PDF資料 |
PDF描述 |
|---|---|
| MJE16002 | 5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS |
| MJE16002 | NPN SILICON POWER TRANSISTORS |
| MJE16002 | POWER TRANSISTORS(5A,450V,80W) |
| MJE253 | 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS |
| MJE243 | POWER TRANSISTORS COMPLEMENTARY SILICON |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MJE15028 | 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15028_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS |
| MJE15028G | 功能描述:兩極晶體管 - BJT 8A 120V 50W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15029 | 功能描述:兩極晶體管 - BJT 8A 120V 50W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJE15029 | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR PNP -120V TO-220 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -120V, TO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復。